Methods of forming a metal silicide region on at least one silicon structure
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United States of America Patent
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Apr 8, 2014
Grant Date -
Aug 22, 2013
app pub date -
Feb 21, 2012
filing date -
Feb 21, 2012
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Abstract
A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.
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