Methods of forming phase change materials and methods of forming phase change memory circuitry
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United States of America Patent
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Apr 15, 2014
Grant Date -
Oct 21, 2010
app pub date -
Apr 15, 2009
filing date -
Apr 15, 2009
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Abstract
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
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