Method for manufacturing solid-state image sensor
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United States of America Patent
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Apr 15, 2014
Grant Date -
Apr 26, 2012
app pub date -
Oct 19, 2011
filing date -
Oct 26, 2010
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Abstract
A method for manufacturing a solid-state image sensor includes forming a gate electrode structure including a gate electrode on a gate insulating film formed on a semiconductor substrate, and implanting ions into a first region and simultaneously implanting the ions into a second region of the semiconductor substrate via the gate electrode structure and the gate insulating film, wherein the first region is a region where a charge accumulation region is to be formed, and the second region is a region where an extended region that extends from the charge accumulation region to a portion below the gate electrode is to be formed, and a mean projected range of the ions in the step of simultaneous implanting of the ions into the first region and the second region is larger than a sum total of thicknesses of the gate electrode and the gate insulating film.
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