Circuit including vertical transistors with a conductive stack having reentrant profile
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United States of America Patent
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Apr 15, 2014
Grant Date -
Aug 22, 2013
app pub date -
Feb 22, 2012
filing date -
Feb 22, 2012
priority date (Note) -
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Abstract
An electrical circuit includes first and second transistors. Each transistor includes a substrate and, positioned thereon, a first electrically conductive material layer including a reentrant profile functioning as a gate. First and second discrete portions of a second electrically conductive material layer are in contact with first and second portions, respectively, of a semiconductor material layer in contact with an electrically insulating material layer, both of which conform to the reentrant profile. The first and second discrete portions are source/drain and drain/source electrodes of the first and second transistors, respectively. A third electrically conductive material layer, in contact with a third portion of the semiconductor material layer, is positioned over the gate, but is not in electrical contact with it. The third electrically conductive material layer is physically separate from the electrodes of the first and second transistors and a common unconnected electrode of the first and second transistors.
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