Semiconductor device
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United States of America Patent
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Apr 15, 2014
Issued Date -
N/A
app pub date -
May 15, 2012
filing date -
May 20, 2011
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Abstract
A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate of the transistor, a channel region of the transistor includes an oxide semiconductor film containing In, Zn, or Sn, and each channel region of transistors in the inverter contains silicon. When a high voltage is input to the inverter, a low voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned off. When a low is input to the inverter, a high voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned on.
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