Nonvolatile semiconductor memory device

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United States of America Patent

PATENT NO 8711629
APP PUB NO 20130003463A1
SERIAL NO

13608587

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Abstract

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Bit lines connected to each nonvolatile memory cell are selected by corresponding selective transistors. A first drive circuit for driving the gate of one of the selective transistors receives a voltage selected by a first voltage switch, and a second drive circuit for driving the gate of the other selective transistor receives a voltage selected by a second voltage switch. A transistor constituting the first drive circuit is different in structure from a transistor constituting the second drive circuit.

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Patent Owner(s)

Patent OwnerAddress
PANASONIC SEMICONDUCTOR SOLUTIONS CO LTD1 KOTARI-YAKEMACHI NAGAOKAKYO-SHI KYOTO 617-8520

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mochida, Reiji Osaka, JP 17 22
Nakayama, Masayoshi Kyoto, JP 53 539
Ono, Takashi Osaka, JP 389 4413

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