Anti-reflection structures for CMOS image sensors

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United States of America Patent

PATENT NO 8716771
APP PUB NO 20120168835A1
SERIAL NO

13418706

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Abstract

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Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adkisson, James W Jericho, US 164 2917
Ellis-Monaghan, John J Grand Isle, US 254 2531
Gambino, Jeffrey P Westford, US 531 7337
Musante, Charles F South Burlington, US 36 319

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