Pinch-off control of gate edge dislocation
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United States of America Patent
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May 13, 2014
Grant Date -
Jun 13, 2013
app pub date -
Dec 13, 2011
filing date -
Dec 13, 2011
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Abstract
The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or between a gate structure and an isolation structure by first amortizing the source or drain region and then recrystallizing the region by using an annealing process with a low pre-heat temperature. A doped epitaxial material may be formed over the recrystallized region. The dislocation and the strain created by the doped epitaxial material in the source or drain region help increase carrier mobility.
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