Fabrication of MOS device with integrated Schottky diode in active region contact trench
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 20, 2014
Issued Date -
N/A
app pub date -
Apr 25, 2013
filing date -
Feb 11, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer, having a body top surface and a body bottom surface; forming a source; forming an active region contact trench that extends through the source and the body into the drain, wherein bottom surface of the active region contact trench is formed to include at least a portion that is shallower than the body bottom surface; and disposing a contact electrode within the active region contact trench.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully