Method of making bulk InGaN substrates and devices thereon

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United States of America Patent

PATENT NO 8729559
APP PUB NO 20120091465A1
SERIAL NO

13272981

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A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.

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Patent Owner(s)

  • SORAA, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alexander, Alex Goleta, US 2 114
D'Evelyn, Mark Goleta, US 2 176
Kamber, Derrick Goleta, US 1 114
Krames, Mike Goleta, US 1 114
Pakalapati, Rajeev Goleta, US 4 143

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