Avalanche photodiode
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United States of America Patent
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May 20, 2014
Grant Date -
Jun 20, 2013
app pub date -
Sep 1, 2011
filing date -
Sep 2, 2010
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Abstract
An APD is provided with a semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, and in the APD, a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2×1011 to 1×1012/cm2.
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