Semiconductor device and method for producing the same

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United States of America Patent

PATENT NO 8735954
APP PUB NO 20130168813A1
SERIAL NO

13687715

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Abstract

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A semiconductor device includes a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten.

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Patent Owner(s)

  • FUJITSU SEMICONDUCTOR LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sashida, Naoya Kuwana, JP 48 402

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