Semiconductor devices with sealed, unlined trenches and methods of forming same
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United States of America Patent
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May 27, 2014
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N/A
app pub date -
Apr 21, 2011
filing date -
Aug 14, 2006
priority date (Note) -
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Abstract
A semiconductor device includes unlined and sealed trenches and methods for forming the unlined and sealed trenches. More particularly, a superjunction semiconductor device includes unlined, and sealed trenches. The trench has sidewalls formed of the semiconductor material. The trench is sealed with a sealing material such that the trench is air-tight. First and second regions are separated by the trench. The first region may include a superjunction Schottky diode or MOSFET. In an alternative embodiment, a plurality of regions are separated by a plurality of unlined and sealed trenches.
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