Methods and processes for optical interferometric or holographic test in the development, evaluation, and manufacture of semiconductor and free-metal devices utilizing anisotropic and isotropic materials
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United States of America Patent
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May 27, 2014
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Mar 5, 2013
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Jul 26, 1999
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Abstract
Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.
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