Method of forming single-walled carbon nanotubes

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United States of America Patent

PATENT NO 8747799
APP PUB NO 20120171107A1
SERIAL NO

13381855

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Abstract

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The present invention relates to a method of forming single-walled carbon nanotubes. The method comprises contacting a gaseous carbon source with mesoporous TUD-1 silicate at suitable conditions. The mesoporous TUD-1 silicate comprises a metal of groups 3-13 of the Periodic Table of the Elements.

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Patent Owner(s)

Patent OwnerAddress
NANYANG TECHNOLOGICAL UNIVERSITY50 NANYANG AVENUE SINGAPORE 639798

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yuan Singapore, SG 252 1626
Yang, Yanhui Singapore, SG 7 41

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