Semiconductor single crystal production device and producing method therefor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8753446
APP PUB NO 20080110394A1
SERIAL NO

11792664

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12). The plurality of exhaust pipes (20) are communicated with a plurality of exhaust ports (8B (22b)) provided at a bottom of a chamber 1.

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Patent Owner(s)

Patent OwnerAddress
SUMCO TECHXIV KABUSHIKI KAISHA25-1 SHINOMIYA 3-CHOME HIRATSUKA-SHI KANAGAWA 254-0014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IIda, Tetsuhiro Kanagawa, JP 8 28
Noda, Akiko Kanagawa, JP 4 18

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