Silicon wafer and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8758505
APP PUB NO 20100178753A1
SERIAL NO

12728970

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Abstract

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A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.

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Patent Owner(s)

  • SUMITOMO MITSUBISHI SILICON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hourai, Masataka Tokyo, JP 46 291
Ono, Toshiaki Tokyo, JP 125 935
Sugimura, Wataru Tokyo, JP 33 134

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