Methods of forming a reversed pattern in a substrate
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United States of America Patent
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Jun 24, 2014
Grant Date -
Mar 3, 2011
app pub date -
Sep 2, 2009
filing date -
Sep 2, 2009
priority date (Note) -
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Abstract
A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.
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