Semiconductor field-effect transistor, memory cell and memory device
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United States of America Patent
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Jun 24, 2014
Grant Date -
Aug 26, 2010
app pub date -
Mar 20, 2006
filing date -
Mar 20, 2006
priority date (Note) -
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Abstract
Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion.
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