Memory sensing using temperature compensated initial currents

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United States of America Patent

PATENT NO 8760939
APP PUB NO 20110310661A1
SERIAL NO

13221071

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Abstract

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The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Porter, John D Meridian, US 144 1537
Taylor, Jennifer E Boise, US 28 121

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