Sidewall image transfer pitch doubling and inline critical dimension slimming

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United States of America Patent

PATENT NO 8764999
APP PUB NO 20120128935A1
SERIAL NO

13158899

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Abstract

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A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, Shannon W Altamont, US 13 84
Hetzer, Dave Schenectady, US 4 56

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