Germanium photodetector schottky contact for integration with CMOS and Si nanophotonics
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United States of America Patent
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Jul 1, 2014
Grant Date -
Jan 30, 2014
app pub date -
Jul 30, 2012
filing date -
Jul 30, 2012
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Abstract
A method of forming an integrated photonic semiconductor structure having a photodetector device and a CMOS device may include depositing a dielectric stack over the photodetector device such that the dielectric stack encapsulates the photodetector. An opening is etched into the dielectric stack down to an upper surface of a region of an active area of the photodetector. A first metal layer is deposited directly onto the upper surface of the region of the active area via the opening such that the first metal layer may cover the region of the active area. Within the same mask level, a plurality of contacts including a second metal layer are located on the first metal layer and on the CMOS device. The first metal layer isolates the active area from the occurrence of metal intermixing between the second metal layer and the active area of the photodetector.
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