Storage device
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United States of America Patent
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Jul 1, 2014
Grant Date -
Sep 1, 2011
app pub date -
Mar 4, 2011
filing date -
Sep 5, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
According to the embodiment, a storage device includes row lines arranged parallel to one another, column lines arranged parallel to one another to intersect with the row lines, and a memory cell disposed at each of intersections of the row lines and the column lines and including a resistance-change element and a diode connected in series to the resistance-change element. The diode includes a stack of a first semiconductor region containing an impurity of a first conductivity type, a second semiconductor region containing an impurity of the first conductivity type lower in concentration than in the first semiconductor region, and a third semiconductor region containing an impurity of a second conductivity type. An impurity concentration in the second semiconductor region of the diode in a first adjacent portion adjacent to the first semiconductor region is higher than that in a second adjacent portion adjacent to the third semiconductor region.
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