Non-volatile semiconductor storage device and manufacturing method of non-volatile semiconductor storage device
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United States of America Patent
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Jul 1, 2014
Grant Date -
Sep 20, 2012
app pub date -
Dec 22, 2011
filing date -
Mar 18, 2011
priority date (Note) -
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Abstract
According to one embodiment, a memory cell includes a resistance change layer, an upper electrode layer, a lower electrode layer, a diode layer, a first oxide film, and a second oxide film. The upper electrode layer is arranged above the resistance change layer. The lower electrode layer is arranged below the resistance change layer. The diode layer is arranged above the upper electrode layer or below the lower electrode layer. The first oxide film exists on a side wall of at least one electrode layer of the upper electrode layer or the lower electrode layer. The second oxide film exists on a side wall of the diode layer. The film thickness of the first oxide film is thicker than a film thickness of the second oxide film.
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