Memory devices with a connecting region having a band gap lower than a band gap of a body region
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United States of America Patent
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Jul 1, 2014
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N/A
app pub date -
Apr 29, 2013
filing date -
Feb 3, 2011
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Abstract
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.
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