Tunnel field effect transistor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8766353
APP PUB NO 20120286350A1
SERIAL NO

13558518

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An FET device characterized as being an asymmetrical tunnel FET (TFET) is disclosed. The TFET includes a gate-stack, a channel region underneath the gate-stack, a first and a second junction adjoining the gate-stack and being capable for electrical continuity with the channel. The first junction and the second junction are of different conductivity types. The TFET also includes spacer formations in a manner that the spacer formation on one side of the gate-stack is thinner than on the other side.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Guilderland, US 3073 29638
Doris, Bruce B Brewster, US 796 13224
Haensch, Wilfried E Somers, US 75 851
Khakifirooz, Ali Slingerlands, US 842 11881
Lauer, Isaac White Plains, US 218 1825
Shahidi, Ghavam G Pound Ridge, US 396 8103

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jan 1, 2026
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00