Electrically pumped lateral emission electroluminescent device integrated in a passive waveguide to generate light or amplify a light signal and fabrication process
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United States of America Patent
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Jul 1, 2014
Grant Date -
May 26, 2011
app pub date -
Nov 18, 2010
filing date -
Nov 19, 2009
priority date (Note) -
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Abstract
An electrically pumped lateral emission electroluminescent device may include a slotted waveguide including a top silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith, and a bottom silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith. A core layer may include silicon oxide between the top and bottom layers and a thickness less than 70 nm. A core layer refraction index may be greater than each of the top and bottom layer refraction indices. A core layer portion may be in a direction of light propagation and may be doped with erbium, and may include silicon nanocrystals. A portion of each of the top and bottom layers may coincide with the core layer portion and may be doped so that the top and bottom layer portions are electrically conductive to define top and bottom plates.
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