Method and apparatus for controlled application of Oersted field to magnetic memory structure
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United States of America Patent
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Jul 1, 2014
Grant Date -
Jun 12, 2014
app pub date -
Dec 11, 2012
filing date -
Dec 11, 2012
priority date (Note) -
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Abstract
An apparatus for applying Oersted fields to a magnetic memory device comprises a first metal layer; a first insulating layer positioned on the first metal layer; a magnetic shift register wire positioned on the first insulating layer; a second insulating layer positioned on the magnetic shift register wire; a second metal layer positioned on the second insulating layer; a first conducting wire positioned in the first metal layer and extending transverse to the magnetic shift register wire; and a second conducting wire positioned in the second metal layer and extending transverse to the magnetic shift register wire. The first conducting wire is offset relative to the second conducting wire, the offset being defined by a distance between a first axis normal to the magnetic shift register wire and through the first conducting wire and a second axis normal to the magnetic shift register wire and through the second conducting wire.
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