Magnetoresistive random access memory

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United States of America Patent

PATENT NO 8767448
APP PUB NO 20140126279A1
SERIAL NO

13668869

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Abstract

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A magnetoresistive random access memory (MRAM) apparatus includes a first conductive line and a second conductive line. A magnetic tunnel junction is in electrical communication with the first conductive line and the second conductive line. The magnetic tunnel junction includes at least one programmable magnetic layer. The MRAM apparatus also includes an insulating layer radially surrounding the magnetic tunnel junction, and the insulating layer has a cavity adjacent to the magnetic tunnel junction.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Annunziata, Anthony J Stamford, US 108 448

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