Supercritical drying method for semiconductor substrate and supercritical drying apparatus
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United States of America Patent
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Jul 8, 2014
Grant Date -
Jan 24, 2013
app pub date -
Mar 15, 2012
filing date -
Jul 19, 2011
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Abstract
According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
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