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United States of America Patent
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Jul 8, 2014
Issued Date -
N/A
app pub date -
Dec 3, 2012
filing date -
Aug 3, 2006
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Abstract
The use of a monolayer or partial monolayer sequencing process, such as atomic layer deposition (ALD), to form a zirconium substituted layer of barium titanium oxide, produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. In various embodiments, structures can be formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response.
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