Dielectric equivalent thickness and capacitance scaling for semiconductor devices
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United States of America Patent
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Jul 8, 2014
Grant Date -
May 22, 2014
app pub date -
Dec 3, 2012
filing date -
Nov 20, 2012
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Abstract
A device and method for fabricating a capacitive component includes forming a high dielectric constant material over a semiconductor substrate and forming a scavenging layer on the high dielectric constant material. An anneal process forms oxide layer between the high dielectric constant layer and the scavenging layer such that oxygen in the high dielectric constant material is drawn out to reduce oxygen content.
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