FinFET structure and method to adjust threshold voltage in a FinFET structure

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United States of America Patent

PATENT NO 8772149
APP PUB NO 20130099313A1
SERIAL NO

13276395

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Abstract

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FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cartier, Eduard A New York, US 89 1891
Greene, Brian J Wappingers Falls, US 85 1478
Guo, Dechao Fishkill, US 268 2416
Wang, Gan Fishkill, US 65 1308
Wang, Yanfeng Fishkill, US 124 702
Wong, Keith Kwong Hon Wappingers Falls, US 241 2676

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