Semiconductor device with air gap therein and manufacturing method thereof
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United States of America Patent
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Jul 8, 2014
Grant Date -
Jan 24, 2013
app pub date -
Mar 16, 2012
filing date -
Jul 19, 2011
priority date (Note) -
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Abstract
In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.
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