Annealing copper interconnects

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United States of America Patent

PATENT NO 8772161
APP PUB NO 20130040454A1
SERIAL NO

13205063

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Abstract

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A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cabral,, Jr Cyril Mahopac, US 92 768
Fritz, Gregory M Yorktown Heights, US 35 370
Lavoie, Christian Ossining, US 212 3400
Murray, Conal E Yorktown Heights, US 79 907
Rodbell, Kenneth P Yorktown Heights, US 127 1616

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