Bottom electrodes for use with metal oxide resistivity switching layers

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United States of America Patent

PATENT NO 8772749
APP PUB NO 20110227020A1
SERIAL NO

13047020

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Abstract

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In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kreupl, Franz München, DE 76 2204
Makala, Raghuveer S Sunnyvale, US 246 6420
Sekar, Deepak Chandra San Jose, US 57 986

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