Solid-state imaging device
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United States of America Patent
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Jul 8, 2014
Grant Date -
Apr 26, 2012
app pub date -
Dec 29, 2011
filing date -
Dec 16, 2004
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
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