High-voltage silicon-on-insulator transistors and methods of manufacturing the same

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United States of America Patent

PATENT NO 8772876
APP PUB NO 20080048263A1
SERIAL NO

11929694

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Abstract

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In a first aspect, a first method of manufacturing a high-voltage transistor is provided. The first method includes the steps of (1) providing a substrate including a bulk silicon layer that is below an insulator layer that is below a silicon-on-insulator (SOI) layer; and (2) forming one or more portions of a transistor node including a diffusion region of the transistor in the SOI layer. A portion of the transistor node is adapted to reduce a voltage greater than about 5 V within the transistor to a voltage less than about 3 V. Numerous other aspects are provided.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ma, William Hsioh-Lien Fishkill, US 23 588
Mandelman, Jack Allan Flat Rock, US 144 3112
Radens, Carl John LaGrangeville, US 30 371
Tonti, William Robert Essex Junction, US 73 1538

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