Tunnel field-effect transistor
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United States of America Patent
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Jul 8, 2014
Grant Date -
Jan 24, 2013
app pub date -
Jul 18, 2012
filing date -
Jul 22, 2011
priority date (Note) -
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Abstract
A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
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