Interconnect structure and method of making same
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United States of America Patent
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Jul 8, 2014
Grant Date -
Jun 18, 2009
app pub date -
Dec 12, 2007
filing date -
Dec 12, 2007
priority date (Note) -
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Abstract
An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.
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