Capping coating for 3D integration applications

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United States of America Patent

PATENT NO 8778736
APP PUB NO 20090042338A1
SERIAL NO

12192367

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Abstract

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A structure for a semiconductor component is provided having a bi-layer capping coating integrated and built on supporting layer to be transferred. The bi-layer capping protects the layer to be transferred from possible degradation resulting from the attachment and removal processes of the carrier assembly used for layer transfer. A wafer-level layer transfer process using this structure is enabled to create three-dimensional integrated circuits.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Purushothaman, Sampath Yorktown Heights, US 221 9139
Topol, Anna W Jefferson Valley, US 56 738

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