Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

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United States of America Patent

PATENT NO 8779471
SERIAL NO

13413216

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Abstract

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Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0x2Ga1-x2Asy2P1-y2 (0≦x2≦1, 0≦y2≦1, y2≠y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

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Patent Owner(s)

  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;SUMITOMO CHEMICAL COMPANY, LIMITED;THE UNIVERSITY OF TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuhara, Noboru Ibaraki, JP 41 195
Hata, Masahiko Ibaraki, JP 79 579
Ishii, Hiroyuki Ibaraki, JP 503 6269
Itatani, Taro Ibaraki, JP 20 116
Miyata, Noriyuki Ibaraki, JP 17 45
Takagi, Shinichi Tokyo, JP 79 2241
Takenaka, Mitsuru Tokyo, JP 15 90
Urabe, Yuji Ibaraki, JP 8 467
Yamada, Hisashi Phoenix, US 165 1997
Yasuda, Tetsuji Ibaraki, JP 24 105
Yokoyama, Masafumi Tokyo, JP 27 195

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