Nonvolatile semiconductor memory device
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United States of America Patent
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Jul 15, 2014
Grant Date -
Mar 6, 2014
app pub date -
Jan 25, 2013
filing date -
Sep 5, 2012
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor substrate, a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate electrode. The first gate insulating film is arranged on the semiconductor substrate. The charge storage layer is arranged on the first gate insulating film, and includes aluminum and silicon. The second gate insulating film is arranged on the charge storage layer, and includes aluminum, silicon, and lanthanum. The control gate electrode is arranged on the second gate insulating film.
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