Nonvolatile semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Jul 15, 2014
Grant Date -
Oct 25, 2012
app pub date -
Jan 18, 2012
filing date -
Apr 19, 2011
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes sheet-like memory strings arranged in a matrix shape substantially perpendicularly to a substrate. A control gate electrode film includes a common connecting section that extends in a first direction and an electrode forming section that is provided for each of memory cells above or below a floating gate electrode film via an inter-electrode dielectric film to project from the common connecting section in a second direction. The floating gate electrode film extends in the second direction and is formed on a first principal plane of a sheet-like semiconductor film via a tunnel dielectric film.
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