Nonvolatile semiconductor memory

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United States of America Patent

PATENT NO 8779503
APP PUB NO 20130056819A1
SERIAL NO

13424544

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Abstract

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According to one embodiment, a nonvolatile semiconductor memory includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The second insulating layer comprises a stacked structure provided in order of a first lanthanum aluminate layer, a lanthanum aluminum silicate layer and a second lanthanum aluminate layer from the charge storage layer side to the control gate electrode side.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsushita, Daisuke Fujisawa, JP 83 715
Takashima, Akira Fuchu, JP 130 2685

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