Two terminal memcapacitor device

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United States of America Patent

PATENT NO 8779848
APP PUB NO 20120146184A1
SERIAL NO

13383981

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Abstract

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A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Borghetti, Julien Mountain View, US 18 155
Pickett, Matthew D San Francisco, US 58 550
Yang, Jianhua Palo Alto, US 174 2056

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