Capacitively-coupled electrostatic (CCE) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
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United States of America Patent
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Jul 15, 2014
Grant Date -
Jan 14, 2010
app pub date -
Jul 7, 2009
filing date -
Jul 7, 2008
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Abstract
A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.
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