Methods of forming micro-electromechanical resonators having passive temperature compensation regions therein
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United States of America Patent
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Jul 22, 2014
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May 21, 2013
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Feb 25, 2011
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Abstract
Methods of forming micromechanical resonators include forming first and second substrates having first and second semiconductor layers of first and second conductivity type therein, respectively. The first semiconductor layer of first conductivity type is bonded to the second semiconductor layer of second conductivity type to thereby define a first rectifying junction at an interface of the bonded semiconductor layers. A piezoelectric layer is formed on the first rectifying junction and at least a first electrode is formed on the piezoelectric layer.
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