Method for manufacturing a thin film transistor array panel
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United States of America Patent
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Jul 22, 2014
Grant Date -
Oct 3, 2013
app pub date -
Aug 6, 2012
filing date -
Apr 2, 2012
priority date (Note) -
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Abstract
A method for manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention includes, forming a gate electrode, a gate insulating layer, and an oxide semiconductor layer on a substrate, first heat treating the substrate comprising the oxide semiconductor layer, forming a source electrode and a drain electrode on the oxide semiconductor layer, the source and drain electrodes facing each other, and forming a passivation layer on the source electrode and the drain electrode. The first heat treating is performed at more than 1 atmosphere and at most 50 or less atmospheres.
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