Non-volatile FINFET memory device and manufacturing method thereof
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United States of America Patent
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Jul 22, 2014
Grant Date -
May 29, 2014
app pub date -
Feb 3, 2014
filing date -
Mar 11, 2010
priority date (Note) -
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Abstract
Methods for fabricating an electronic device and electronic devices therefrom are provided. A method includes forming one or more masking layers on a semiconducting surface of a substrate and forming a plurality of dielectric isolation features and a plurality of fin-type projections using the masking layer. The method also includes processing the masking layers and the plurality of fin-type projections to provide an inverted T-shaped cross-section for the plurality of fin-type projections that includes a distal extension portion and a proximal base portion. The method further includes forming a plurality of bottom gate layers on the distal extension portion and forming a plurality of control gate layers on the plurality of dielectric isolation features and the plurality of bottom gate layers.
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